Figure 4: Interdigitated cell layout for RF power transistor. The most critical parasitic capacitance for the gain is between collector and base. In a vertical RF power transistor, the silicon ...

As a voltage is applied to this channel, it creates an electric field which acts like a faucet to turn on or off current through the rest of the transistor. MOSFETs were not originally better than ...

Collector-to-base breakdown voltage when the the emitter terminal is open. Maximum collector current is the maximum current that the collector can handle while the transistor is active. Current gain ...

It carries the capability to manage or modify current or voltage flow, amplify and produce electrical signals, and act as a switch or gate. The impressive fact is that trillions of these transistors ...

Silicon transistors are held back by a physical limit (the 'Boltzmann tyranny') that prevents transistors from operating ...

If you want to control it from a 3.3 V MCU that can’t handle the high-side voltage on its pins, you can add a NPN transistor section as shown – this inverts the logic, making it into a more ...

Stimulated emission gain is not required ... the input capacitance of the receiving transistor to charge through the line resistance, but the logic voltage is essentially unaffected by resistive ...

Transistors are no doubt one of humankinds ... used to explain important transistor parameters such as hfe (DC current gain Beta) or the VBE (voltage to forward bias the base-emitter junction).

The problem they're tackling is what's known as "Boltzmann tyranny." It refers to the fundamental limit to how little voltage is required to switch a silicon ...

In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe ...