Collector-to-base breakdown voltage when the the emitter terminal is open. Maximum collector current is the maximum current that the collector can handle while the transistor is active. Current gain ...

Figure 4: Interdigitated cell layout for RF power transistor. The most critical parasitic capacitance for the gain is between collector and base. In a vertical RF power transistor, the silicon ...

The transistor acts like an insulator or a switch that is turned off. When a positive voltage is applied to the base, electrons are pulled out of the junctions and they no longer act as barriers.

Stimulated emission gain is not required ... the input capacitance of the receiving transistor to charge through the line resistance, but the logic voltage is essentially unaffected by resistive ...

If you want to control it from a 3.3 V MCU that can’t handle the high-side voltage on its pins, you can add a NPN transistor section as shown – this inverts the logic, making it into a more ...

Transistors are no doubt one of humankinds ... used to explain important transistor parameters such as hfe (DC current gain Beta) or the VBE (voltage to forward bias the base-emitter junction).

MIT researchers have made a big breakthrough in creating new, incredibly small transistors that could improve electronics’ speed and efficiency. Transistors are essential parts of most electronic ...

In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe ...